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RB162M-30TF Datasheet(PDF) 1 Page - Rohm |
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RB162M-30TF Datasheet(HTML) 1 Page - Rohm |
1 / 5 page Data Sheet www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. Schottky Barrier Diode RB162M-30 lApplications lExternal Dimensions (Unit : mm) lLand Size Figure (Unit : mm) General rectification lFeatures 1)Small power mold type.(PMDU) 2)High reliability lConstruction Silicon epitaxial lStructure lTaping Dimensions (Unit : mm) lAbsolute Maximum Ratings (Ta=25°C) Symbol Unit VRM V VR V Io A IFSM A Tj °C Tstg °C lElectrical Characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Forward voltage VF1 - 0.44 0.52 V IF=1.0A Reverse current IR - 10 100 m A VR=30V Conditions Limits 30 1 30 Parameter Reverse voltage (DC) Average rectified forward current (*1) Reverse voltage (repetitive) 30 Forward current surge peak (60Hz・1cyc) Parameter Junction temperature Storage temperature 150 (*1)Mounting on epoxi board. 180°Half sine wave - 55 to +150 0.9±0.1 1.6±0.1 0.8±0.1 0.1±0.1 0.05 PMDU 1.2 4.0±0.1 2.0±0.05 φ 1.55±0.05 1.81±0.1 4.0±0.1 φ 1.0±0.1 0.25±0.05 1.5MAX ROHM : PMDU JEDEC :SOD-123 Manufacture Date 1/4 2012.08 - Rev.A |
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