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FJA4310 Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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FJA4310 Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 5 page ©2002 Fairchild Semiconductor Corporation Rev. B, June 2002 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T C=25°C unless otherwise noted Electrical Characteristics T C=25°C unless otherwise noted * Pulse Test : PW=20 µs hFE Classification Symbol Parameter Value Units VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 140 V VEBO Emitter-Base Voltage 6 V IC Collector Current (DC) 10 A IB Base Current (DC) 1.5 A PC Collector Dissipation (TC=25°C) 100 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC=5mA, IE=0 200 V BVCEO Collector-Emitter Breakdown Voltage IC=50mA, RBE=∞ 140 V BVEBO Emitter-Base Breakdown Voltage IE=5mA, IC=0 6 V ICBO Collector Cut-off Current VCB=200V, IE=0 10 µA IEBO Emitter Cut-off Current VEB=6V, IC=0 10 µA hFE * DC Current Gain VCE=4V, IC=3A 50 180 VCE(sat) Collector-Emitter Saturation Voltage IC=5A, IB=0.5A 0.5 V Cob Output Capacitance VCB=10V, f=1MHz 250 pF fT Current Gain Bandwidth Product VCE=5V, IC=1A 30 MHz Classification R O Y hFE 50 ~ 100 70 ~ 140 90 ~ 180 FJA4310 Audio Power Amplifier • High Current Capability : IC=10A • High Power Dissipation •Wide S.O.A • Complement to FJA4210 TO-3P 1 1.Base 2.Collector 3.Emitter |
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