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FGL60N170D Datasheet(PDF) 3 Page - Fairchild Semiconductor

Part # FGL60N170D
Description  Electrical Characteristics of IGBT
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Manufacturer  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FGL60N170D Datasheet(HTML) 3 Page - Fairchild Semiconductor

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©2001 Fairchild Semiconductor Corporation
FGL60N170D Rev. B
Fig 1. Typical Output Chacracteristics
Fig 2. Typical Saturation Voltage Characteristics
Fig 3. Collector to Emitter Saturation
Voltage vs. Case Temperature
Fig 4. Typical Capacitance vs.
Collector to Emitter Voltage
Fig 5. Saturation Voltage vs. VGE
Fig 6. Saturation Voltage vs. VGE
02468
0
20
40
60
80
100
20V
15V
10V
8V
V
GE = 6V
Common Emitter
T
C = 25
oC
Collector - Emitter Voltage, V
CE [V]
02
468
10
0
20
40
60
80
100
120
Common Emitter
V
GE = 15V
T
C =
25
oC
T
C = 125
oC
Collector - Emitter Voltage, V
CE [V]
25
50
75
100
125
150
2
3
4
5
6
7
I
C= 60A
I
C
= 80A
Common Emitter
V
GE = 15V
I
C = 30A
Case Temperature, T
C [
o
C]
110
0
1000
2000
3000
4000
5000
Common Emitter
V
GE=0V, f=1MHz
T
C=25
o
C
Cies
Coes
Cres
Collector - Emitter Voltage, V
CE [V]
04
8
12
16
20
0
4
8
12
16
20
60A
Common Emitter
T
C=25
oC
80A
30A
Gate - Emitter Voltage, V
GE [V ]
04
8
12
16
20
0
4
8
12
16
20
60A
Common Emitter
T
C=125
oC
80A
30A
Gate - Emitter Voltage, V
GE [V]


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