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STS26N3LLH6 Datasheet(PDF) 5 Page - STMicroelectronics |
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STS26N3LLH6 Datasheet(HTML) 5 Page - STMicroelectronics |
5 / 14 page STS26N3LLH6 Electrical characteristics Doc ID 019030 Rev 2 5/14 Table 7. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) tr td(off) tf Turn-on delay time Rise time Turn-off delay time Fall time VDD=15 V, ID= 13 A, RG=4.7 Ω, VGS=4.5 V Figure 13 - 17 18 75 46 - ns ns ns ns Table 8. Source drain diode Symbol Parameter Test conditions Min Typ. Max Unit ISD Source-drain current - 26 A ISDM (1) 1. Pulse width limited by safe operating area Source-drain current (pulsed) - 104 A VSD (2) 2. Pulsed: pulse duration=300 µs, duty cycle 1.5% Forward on Voltage ISD=13 A, VGS=0 - 1.1 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD=13 A, di/dt = 100 A/µs, VDD=20 V, Tj=150 °C Figure 15 - 34 35 2.1 ns nC A |
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