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STS26N3LLH6 Datasheet(PDF) 3 Page - STMicroelectronics |
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STS26N3LLH6 Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 14 page STS26N3LLH6 Electrical ratings Doc ID 019030 Rev 2 3/14 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 30 V VGS (1) 1. Continuous mode Gate-source voltage ± 20 V ID Drain current (continuous) at TC = 25 °C 26 A ID Drain current (continuous) at TC=100 °C 16.25 A IDM (2) 2. Pulse width limited by safe operating area Drain current (pulsed) 104 A PTOT Total dissipation at Tamb = 25 °C 2.7 W TJ Tstg Operating junction temperature Storage temperature -55 to 150 °C Table 3. Thermal resistance Symbol Parameter Value Unit Rthj-amb (1) 1. When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 sec Thermal resistance junction-ambient 47 °C/W Table 4. Avalanche data Symbol Parameter Value Unit IAV Not-repetitive avalanche current 40 A EAS Single pulse avalanche energy (starting Tj=25 °C, ID=IAV) 525 mJ |
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