Electrical characteristics

STN3P6F6

4/12

DocID023758 Rev 4

2

Electrical characteristics

(Tcase = 25 °C unless otherwise specified).

Note:

For the P-channel Power MOSFET actual polarity of voltages and current has to be

reversed.

Table 4. On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Drain-source

breakdown voltage

60

V

Zero gate voltage

1

10

µA

µA

Gate-body leakage

±100

nA

2

4

V

Static drain-source on-

resistance

0.13

0.16

Ω

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Input capacitance

Output capacitance

Reverse transfer

capacitance

-

340

40

20

-

pF

pF

pF

Total gate charge

Gate-source charge

Gate-drain charge

(see Figure 14)

-

6.4

1.7

1.7

-

nC

nC

nC

Table 6. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Turn-on delay time

Rise time

Turn-off delay time

Fall time

(see Figure 13)

-

6.4

5.3

14

3.7

-

ns

ns

ns

ns