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STB80PF55T4 Datasheet(PDF) 5 Page - STMicroelectronics |
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STB80PF55T4 Datasheet(HTML) 5 Page - STMicroelectronics |
5 / 16 page STB80PF55, STP80PF55 Electrical characteristics Doc ID 8177 Rev 6 5/16 Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed Table 7. Source drain diode Symbol Parameter Test condictions Min.Typ.Max. Unit ISD ISDM (1) 1. Pulse width limited by Tjmax . Source-drain current Source-drain current (pulsed) - 10 40 A A VSD (2) 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5 %. Forward on voltage ISD = 80 A, VGS = 0 - 1.6 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 80 A, di/dt = 100 A/µs VDD = 25 V, Tj =150 °C - 110 495 9 ns µC A |
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Similar Description - STB80PF55T4 |
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