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RB521ZS-30 Datasheet(PDF) 1 Page - Rohm |
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RB521ZS-30 Datasheet(HTML) 1 Page - Rohm |
1 / 4 page RB521ZS-30 Diodes Rev.C 1/3 Schottky Barrier Diode RB521ZS-30 Applications General rectification Features 1) Ultra small mold type.(GMD2) 2) Low VF 3) High reliability Construction Silicon epitaxial planar Dimensions (Unit : mm) Land size figure (Unit : mm) Structure Taping specifications (Unit : mm) Absolute maximum ratings (Ta=25 °C) Symbol Unit VR V Io mA IFSM mA Tj ℃ Tstg ℃ Forward current surge peak (60Hz・1cyc) 500 150 Junction temperature Storage temperature Parameter Reverse voltage (DC) Average rectified forward current -40 to +150 Limits 30 100 Electrical characteristic (Ta=25 °C) Symbol Min. Typ. Max. Unit Forward voltage VF -- 0.37 V IF=10mA IR -- 7 µA VR=10V Reverse current Parameter Conditions GMD2 0.31 0.3±0.05 0.3±0.03 0~0.03 0.27±0.03 D JEDEC : - ROHM : GMD2 JEITA : - dot(year week factory) |
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