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UC3610DW Datasheet(PDF) 1 Page - Texas Instruments |
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UC3610DW Datasheet(HTML) 1 Page - Texas Instruments |
1 / 13 page UC1610 UC3610 SLUS339B − JUNE 1993 − REVISED DECEMBER 2004 DUAL SCHOTTKY DIODE BRIDGE 1 www.ti.com FEATURES D Monolithic Eight-Diode Array D Exceptional Efficiency D Low Forward Voltage D Fast Recovery Time D High Peak Current D Small Size DESCRIPTION This eight-diode array is designed for high-current, low duty-cycle applications typical of flyback voltage clamping for inductive loads. The dual bridge connection makes this device particularly applicable to bipolar driven stepper motors. The use of Schottky diode technology features high efficiency through lowered forward voltage drop and decreased reverse recovery time. This single monolithic chip is fabricated in both hermetic CERDIP and copper-leaded plastic packages. The UC1610 in ceramic is designed for −55 °C to 125°C environments but with reduced peak current capability. The UC2610 in plastic and ceramic is designed for −25 °C to 125°C environments also with reduced peak current capability; while the UC3610 in plastic has higher current rating over a 0 °C to 70°C temperature range. AVAILABLE OPTIONS T T Packaged Devices TA = TJ SOIC Wide (DW) DIL (J) DIL (N) −55 °C to 125°C UC1610DW UC1610J UC1610N −25 °C to 125°C UC2610DW UC2610J UC2610N 0 °C to 70°C UC3610DW UC3610J UC3610N THERMAL INFORMATION PACKAGE θja θjc SOIC (DW) 16 pin 50 − 100(1) 27 DIP (J) 8 pin 125 − 160 20(2) DIP (N) 8 pin 103(1) 50 NOTES: 1. Specified θja (junction-to-ambient) is for devices mounted to 5-in2 FR4 PC board with one ounce copper where noted. When resistance range is given, lower values are for 5-in2 aluminum PC board. Test PWB was 0.062 in thick and typically used 0.635-mm trace widths for power packages and 1.3-mm trace widths for non-power packages with a 100-mil x 100-mil probe land area at the end of each trace. 2. θjc data values stated were derived from MIL−STD−1835B. MIL−STD−1835B states that the baseline values shown are worst case (mean + 2s) for a 60-mil x 60-mil microcircuit device silicon die and applicable for devices with die sizes up to 14400 square mils. For device die sizes greater than 14400 square mils use the following values; dual-in-line, 11 °C/W; flat pack, 10°C/W; pin grid array, 10 °C/W. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2001, Texas Instruments Incorporated |
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