NVB60N06T4G datasheet(3/9 Pages) ONSEMI

Part #	NVB60N06T4G

Description	Power MOSFET 60 V, 60 A, N?묬hannel D2PAK

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NTB60N06, NVB60N06

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3

0.026

0.022

0.018

0.01

40

20

0

0.006

120

60

0.014

TJ = 25°C

TJ = −55°C

TJ = 100°C

VGS = 15 V

80

100

VGS = 10 V

Figure 1. On−Region Characteristics

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

120

60

40

20

5

3

2

1

0

Figure 2. Transfer Characteristics

VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

8

6

5

4

3

120

60

40

20

0

Figure 3. On−Resistance versus Gate−to−Source

Voltage

ID, DRAIN CURRENT (AMPS)

0.026

0.022

0.018

0.01

40

20

0

Figure 4. On−Resistance versus Drain Current

and Gate Voltage

ID, DRAIN CURRENT (AMPS)

0

0.006

Figure 5. On−Resistance Variation with

Temperature

TJ, JUNCTION TEMPERATURE (°C)

2.2

2

1.8

1.6

1.4

1.2

1

0.8

175

125

100

75

50

25

0

−25

−50

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

10

0

1000

100

10

0.6

10,000

Figure 6. Drain−to−Source Leakage Current

versus Voltage

120

60

0.014

20

60

4

30

40

50

4.5 V

5 V

5.5 V

7 V

6 V

9 V

8 V

TJ = 25°C

TJ = −55°C

TJ = 100°C

VDS ≥ 10 V

TJ = 25°C

TJ = −55°C

TJ = 100°C

VDS = 10 V

ID = 30 A

VGS = 10 V

TJ = 150°C

VGS = 0 V

TJ = 100°C

80

100

80

100

7

80

100

150

TJ = 125°C

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