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FDW258P Datasheet(PDF) 3 Page - Fairchild Semiconductor |
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FDW258P Datasheet(HTML) 3 Page - Fairchild Semiconductor |
3 / 5 page FDW258P Rev. D (W) Typical Characteristics 0 20 40 60 80 00.511.5 2 2.5 3 -VDS, DRAIN TO SOURCE VOLTAGE (V) VGS = -4.5V -2.5V -2.0V -1.8V -3.5V 0.8 1 1.2 1.4 1.6 1.8 2 2.2 0 204060 80 -ID, DRAIN CURRENT (A) VGS = - 1.8V -4.5V -3.0V -3.5V -2.5V -2.0V Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.8 0.9 1 1.1 1.2 1.3 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( oC) ID = -9A VGS = - 4.5V 0.005 0.009 0.013 0.017 0.021 0.025 1 234 5 -VGS, GATE TO SOURCE VOLTAGE (V) ID = -4.5A TA = 125 oC TA = 25 oC Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 0 20 40 60 80 0.5 1 1.5 2 2.5 -VGS, GATE TO SOURCE VOLTAGE (V) TA = -55 oC 25oC 125oC VDS = -5V 0.0001 0.001 0.01 0.1 1 10 00.2 0.4 0.6 0.8 1 -VSD, BODY DIODE FORWARD VOLTAGE (V) VGS = 0V TA = 125 oC 25oC -55oC Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. |
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