S852T datasheet(2/8 Pages) VISHAY

Part #	S852T

Description	Silicon NPN Planar RF Transistor

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Manufacturer	VISHAY [Vishay Siliconix]

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Document Number 85052

Rev. 1.5, 08-Sep-08

S852T / S852TW

Vishay Semiconductors

Maximum Thermal Resistance

1) on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35

μm Cu

Electrical DC Characteristics

Tamb = 25 °C, unless otherwise specified

Electrical AC Characteristics

Tamb = 25 °C, unless otherwise specified

Parameter

Test condition

Symbol

Value

Unit

Junction ambient

1)

RthJA

450

K/W

Parameter

Test condition

Symbol

Min

Typ.

Max

Unit

Collector-emitter cut-off current

VCE = 12 V, VBE = 0

ICES

100

μA

Collector-base cut-off current

VCB = 8 V, IE = 0

ICBO

100

nA

Emitter-base cut-off current

VEB = 1 V, IC = 0

IEBO

1

μA

Collector-emitter breakdown

voltage

IC = 1 mA, IB = 0

V(BR)CEO

6V

Collector-emitter saturation

voltage

IC = 5 mA, IB = 0.5 mA

VCEsat

0.1

0.4

V

DC forward current transfer ratio VCE = 3 V, IC = 1 mA

hFE

40

90

150

Parameter

Test condition

Symbol

Min

Typ.

Max

Unit

Transition frequency

VCE = 3 V, IC = 1 mA,

f = 500 MHz

fT

4.7

GHz

VCE = 2 V, IC = 1.5 mA,

f = 500 MHz

fT

5.2

GHz

Collector-base capacitance

VCB = 1 V, f = 1 MHz

Ccb

0.25

pF

Noise figure

ZS = ZSopt, f = 450 MHz,

VCE = 2 V, IC = 0.5 mA

Fopt

1.1

dB

ZS = ZSopt, f = 945 MHz,

VCE = 3 V, IC = 1 mA

Fopt

1.8

dB

ZS = ZSopt, f = 945 MHz,

VCE = 2 V, IC = 1.5 mA

Fopt

2dB

Power gain

VCE = 2 V, IC = 0.5 mA,

f = 450MHz

Gpe @Fopt

11.5

dB

VCE = 3 V, IC = 1 mA,

f = 945 MHz

Gpe @Fopt

10.5

dB

VCE = 2 V, IC = 1.5 mA,

f = 945 MHz

Gpe @Fopt

12

dB

Collector current for fT max

VCE = 2 V, f = 500 MHz

IC

3mA

Real part of input impedance

VCE = 3 V, IC = 1 mA,

f = 945 MHz

Re(h11e)

50

Ω

VCE = 2 V, IC = 1.5 mA,

f = 945 MHz

Re(h11e)

50

Ω

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