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MJB45H11G Datasheet(PDF) 3 Page - ON Semiconductor |
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MJB45H11G Datasheet(HTML) 3 Page - ON Semiconductor |
3 / 6 page MJB44H11 (NPN), NJVMJB44H11 (NPN), MJB45H11 (PNP), NJVMJB45H11 (PNP) http://onsemi.com 3 Figure 2. Maximum Rated Forward Bias Safe Operating Area 100 1.0 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 5.0 10 TC ≤ 70° C DUTY CYCLE ≤ 50% 2.0 3.0 20 30 50 100 1.0 7.0 70 1.0 ms dc 0.1 0.2 0.3 0.5 2.0 3.0 5.0 10 20 30 50 10 ms 100 ms 1.0 ms There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 2 is based on TJ(pk) = 150°C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) v 150°C. TJ(pk) may be calculated from the data in Figure 1. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. Figure 3. Power Derating 0 T, TEMPERATURE ( °C) 0 40 60 100 120 160 40 TC 20 60 0 2.0 TA 1.0 3.0 80 140 TC TA 20 |
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