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MJB45H11G Datasheet(PDF) 3 Page - ON Semiconductor

Part # MJB45H11G
Description  Complementary Power Transistors
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MJB45H11G Datasheet(HTML) 3 Page - ON Semiconductor

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MJB44H11 (NPN), NJVMJB44H11 (NPN), MJB45H11 (PNP), NJVMJB45H11 (PNP)
http://onsemi.com
3
Figure 2. Maximum Rated Forward Bias
Safe Operating Area
100
1.0
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
5.0
10
TC ≤ 70° C
DUTY CYCLE
≤ 50%
2.0
3.0
20
30
50
100
1.0
7.0
70
1.0
ms
dc
0.1
0.2
0.3
0.5
2.0
3.0
5.0
10
20
30
50
10
ms
100
ms
1.0 ms
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 2 is based on TJ(pk) = 150°C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v 150°C. TJ(pk) may be calculated from the data in
Figure 1. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
Figure 3. Power Derating
0
T, TEMPERATURE (
°C)
0
40
60
100
120
160
40
TC
20
60
0
2.0
TA
1.0
3.0
80
140
TC
TA
20


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