1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

RF Amplifier Transistor

PNP Silicon

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector – Emitter Voltage

VCEO

–15

Vdc

Collector – Base Voltage

VCBO

–15

Vdc

Emitter – Base Voltage

VEBO

–4.0

Vdc

Total Device Dissipation @ TA = 25°C

Derate above 25

°C

PD

350

2.81

mW

mW/

°C

Operating and Storage Junction

Temperature Range

TJ, Tstg

– 55 to +150

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Ambient

RqJA

357

°C/W

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector – Emitter Breakdown Voltage

(IC = –1.0 mAdc, IB = 0)

V(BR)CEO

–15

—

—

Vdc

Collector – Base Breakdown Voltage

(IC = –10 mAdc, IE = 0)

V(BR)CBO

–15

—

—

Vdc

Emitter – Base Breakdown Voltage

(IE = –10 mAdc, IC = 0)

V(BR)EBO

–4.0

—

—

Vdc

Collector Cutoff Current

(VCB = –10 Vdc, IE = 0)

ICBO

—

—

–100

nAdc

Preferred devices are Motorola recommended choices for future use and best overall value.

Order this document

by MPSH69/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

MPSH69

CASE 29–04, STYLE 1

TO–92 (TO–226AA)

1

2

3

Motorola Preferred Device

COLLECTOR

3

2

BASE

1

EMITTER