©2013 Silicon Storage Technology, Inc.

DS70005041C

05/13

6

2.4 GHz High-Power, High-Gain Power Amplifier

SST12LP19E

Data Sheet

Electrical Specifications

The RF and DC specifications for the power amplifier interface signals. Refer to Table 4 for the DC voltage and

current specifications. Refer to Figures 4 through 14 for the RF performance.

Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute

Maximum Stress Ratings” may cause permanent damage to the device. This is a stress rating only and

functional operation of the device at these conditions or conditions greater than those defined in the

operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating con-

ditions may affect device reliability.)

1. Never measure with CW source. Pulsed single-tone source with <50% duty cycle is recommended. Exceeding the max-

imum rating of average output power could cause permanent damage to the device.

2. Measured with 100% duty cycle 54 Mbps 802.11g OFDM Signal

Surface Mount Solder Reflow Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C for 10 seconds

Table 3: Operating Range

Range

Ambient Temp

Industrial

-40°C to +85°C

3.3V

T3.1 75041