©2013 Silicon Storage Technology, Inc.

DS70005025C

05/13

Data Sheet

www.microchip.com

Features

• Small package size

– 12-contact UQFN (2mm x 2mm x 0.6mm max thick-

ness)

• Wide operating voltage range

• High linear output power, 802.11a/n/ac:

– Spectrum mask compliant using 802.11a OFDM

- Up to 24 dBm at 5.0V

- Up to 22 dBm at 3.3V

– Spectrum mask compliant using 802.11n MCS7, 40 MHz

- Up to 22 dBm at 5.0V

- Up to 19 dBm at 3.3V

– ~3% EVM across 5.1-5.9 GHz for 54 Mbps 802.11a

– 1.8% EVM across 5.1-5.9 GHz for 351 Mbps 802.11ac

• High power-added efficiency/low operating current

for 54 Mbps 802.11a applications

•Gain:

– Typically >26 dB gain across broadband

• Low idle current

• High speed power-up/-down

– Turn on/off time (10%~90%) <100 ns

• Low shut-down current (<1 µA)

• On-chip power detector with -20 dB linear dynamic

range

– Temperature Stable

– VSWR insensitive

•50

Ω on-chip input match and simple output match

• Packages available

– 12-pin QFN 2mm x 2mm x 0.55mm

• All lead-free devices are RoHS compliant

Applications

• WLAN (IEEE 802.11a/n/ac)

•Japan WLAN

• HyperLAN2

• Multimedia

•WiMax

4.9-5.9 GHz High-Linearity Power Amplifier

SST11CP15E

The SST11CP15E is a versatile power amplifier designed for 802.11a/n/ac

embedded applications and is based on the highly-reliable InGaP/GaAs HBT

technology. It is easily configured for high-linearity, high-efficiency applications

over a wide temperature range while operating over the 4.9-5.9 GHz frequency

band. The SST11CP15E has excellent linearity while meeting 802.11a spectrum

mask at 23 dBm with a 3.3V power supply, and at 24.5 dBm with a 5.0V supply.

It provides up to 18 dm, at 3% EVM with 802.11a 54 Mbps, and up to 16 dBm, at

1.8% EVM with 802.11ac 351 Mbps Modulation and 3.3V bias. The power ampli-

fier requires only a 4mA reference current for on/off control. It includes a VSWR/

temperature insensitive, linear power detector. The SST11CP15E is offered in a

12-contact UQFN package.