FDR856P datasheet(3/8 Pages) FAIRCHILD

Part #	FDR856P

Description	P-Channel Logic Level Enhancement Mode Field Effect Transistor

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Manufacturer	FAIRCHILD [Fairchild Semiconductor]

Direct Link	http://www.fairchildsemi.com

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FDR856P Rev.B

0

0.5

1

1.5

2

2.5

3

0

5

10

15

20

25

30

-V

, DRAIN-SOURCE VOLTAGE (V)

DS

-4.5V

-2.5V

-4.0V

-5.5V

-3.5V

-3.0V

V

= -10V

GS

Typical Electrical Characteristics

Figure 1. On-Region Characteristics

.

Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage

.

-50

-25

0

25

50

75

100

125

150

0.6

0.8

1

1.2

1.4

1.6

T , JUNCTION TEMPERATURE (°C)

J

V

= -10V

GS

I = -6.3A

D

Figure 3. On-Resistance Variation with

Temperature

.

1

2

3

4

5

0

5

10

15

20

25

30

-V

, GATE TO SOURCE VOLTAGE (V)

V

= -5V

DS

GS

T = -55°C

J

125°C

25°C

Figure 5 . Transfer Characteristics.

Figure 6 . Body Diode Forward Voltage

Variation with Source

Current

and Temperature.

2

4

6

8

10

0

0.025

0.05

0.075

0.1

0.125

-V

, GATE TO SOURCE VOLTAGE (V)

GS

I = -3A

D

T = 125°C

J

T = 25°C

J

Figure 4 . On Resistance Variation with

Gate-to-Source Voltage.

0

5

10

15

20

25

30

0.5

1

1.5

2

2.5

- I , DRAIN CURRENT (A)

V

= -3.5 V

GS

D

-10V

-4.5V

-4.0V

-7.0V

-5.0V

-5.5V

0

0.2

0.4

0.6

0.8

1

1.2

0.0001

0.001

0.01

0.1

1

5

40

-V

, BODY DIODE FORWARD VOLTAGE (V)

25°C

-55°C

V

= 0V

GS

SD

T = 125°C

J

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