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FDR8305 Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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FDR8305 Datasheet(HTML) 1 Page - Fairchild Semiconductor |
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1 / 8 page  FD8305N Rev. C FDR8305N Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description These N-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Applications • Load switch • Motor driving • Power Management November 1999 Features • 4.5 A, 20 V. R DS(ON) = 0.022 Ω @ VGS = 4.5 V R DS(ON) = 0.028 Ω @ VGS = 2.5 V. • Low gate charge (16.2nC typical). • Fast switching speed. • High performance trench technology for extremely low R DS(ON). • Small footprint (38% smaller than a standard SO-8);low profile package (1 mm thick); power handling capability similar to SO-8. 1999 Fairchild Semiconductor Corporation Absolute Maximum Ratings T A = 25°C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 20 V VGSS Gate-Source Voltage ±8 V ID Drain Current - Continuous (Note 1a) 4.5 A - Pulsed 20 PD Power Dissipation for Single Operation (Note 1a) 0.8 W TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 156 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape Width Quantity .8305 FDR8305N 13’’ 12mm 3000 units D1 D2 D2 D1 G1 G2 S1 S2 SuperSOT -8 TM 1 5 7 8 6 4 3 2 |
Similar Part No. - FDR8305 |
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Similar Description - FDR8305 |
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