April 1998

FDR4410

N-Channel Enhancement Mode Field Effect Transistor

General Description

Features

Symbol

Parameter

FDR4410

Units

V

DSS

Drain-Source Voltage

30

V

V

GSS

Gate-Source Voltage

±20

V

I

D

Draint Current

- Continuous

(Note 1a)

9.3

A

- Pulsed

40

P

D

Maximum Power Dissipation

(Note 1a)

1.8

W

(Note 1b)

1

(Note 1c)

0.9

T

Operating and Storage Temperature Range

-55 to 150

°C

THERMAL CHARACTERISTICS

70

°C/W

Thermal Resistance, Junction-to-Case

(Note 1)

20

°C/W

FDR4410 Rev.C

9.3 A, 30 V. R

R

High density cell design for extremely low R

Proprietary SuperSOT

package with high power and current handling capability.

The FDR4410 has been designed as a smaller, low cost

alternative to the popular Si4410DY.

The SuperSOT

package.

The

SuperSOT

advanced

package

design

and

optimized pinout allow the typical power dissipation to be

similar to the bigger SO-8 package.

SOT-23

SuperSOT

SOIC-16

SO-8

SOT-223

SuperSOT

D

S

D

D

S

D

D

G

SuperSOT -8

TM

pin 1

4410

1

5

6

7

8

4

3

2

© 1998 Fairchild Semiconductor Corporation