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NTD4302 Datasheet(PDF) 2 Page - ON Semiconductor

Part # NTD4302
Description  Power MOSFET 68 A, 30 V, N?묬hannel DPAK
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NTD4302 Datasheet(HTML) 2 Page - ON Semiconductor

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NTD4302
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 mA)
Positive Temperature Coefficient
V(BR)DSS
30
25
Vdc
mV/°C
Zero Gate Voltage Drain Current
(VGS = 0 Vdc, VDS = 30 Vdc, TJ = 25°C)
(VGS = 0 Vdc, VDS = 30 Vdc, TJ = 125°C)
IDSS
1.0
10
mAdc
Gate−Body Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc)
IGSS
±100
nAdc
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = VGS, ID = 250 mAdc)
Negative Temperature Coefficient
VGS(th)
1.0
1.9
−3.8
3.0
Vdc
Static Drain−Source On−State Resistance
(VGS = 10 Vdc, ID = 20 Adc)
(VGS = 10 Vdc, ID = 10 Adc)
(VGS = 4.5 Vdc, ID = 5.0 Adc)
RDS(on)
0.0078
0.0078
0.010
0.010
0.010
0.013
W
Forward Transconductance (VDS = 15 Vdc, ID = 10 Adc)
gFS
20
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 24 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
2050
2400
pF
Output Capacitance
Coss
640
800
Reverse Transfer Capacitance
Crss
225
310
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
(VDD = 25 Vdc, ID = 1.0 Adc,
VGS = 10 Vdc,
RG = 6.0 W)
td(on)
11
20
ns
Rise Time
tr
15
25
Turn−Off Delay Time
td(off)
85
130
Fall Time
tf
55
90
Turn−On Delay Time
(VDD = 25 Vdc, ID = 1.0 Adc,
VGS = 10 Vdc,
RG = 2.5 W)
td(on)
11
20
ns
Rise Time
tr
13
20
Turn−Off Delay Time
td(off)
55
90
Fall Time
tf
40
75
Turn−On Delay Time
(VDD = 24 Vdc, ID = 20 Adc,
VGS = 10 Vdc,
RG = 2.5 W)
td(on)
15
ns
Rise Time
tr
25
Turn−Off Delay Time
td(off)
40
Fall Time
tf
58
Gate Charge
(VDS = 24 Vdc, ID = 2.0 Adc,
VGS = 10 Vdc)
QT
55
80
nC
Qgs (Q1)
5.5
Qgd (Q2)
15
BODY−DRAIN DIODE RATINGS (Note 5)
Diode Forward On−Voltage
(IS = 2.3 Adc, VGS = 0 Vdc)
(IS = 20 Adc, VGS = 0 Vdc)
(IS = 2.3 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD
0.75
0.90
0.65
1.0
Vdc
Reverse Recovery Time
(IS = 2.3 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/ms)
trr
39
65
ns
ta
20
tb
19
Reverse Recovery Stored Charge
Qrr
0.043
mC
5. Indicates Pulse Test: Pulse Width = 300 msec max, Duty Cycle ≤ 2%.
6. Switching characteristics are independent of operating junction temperature.


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