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FDP7030BL Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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FDP7030BL Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 5 page October 2003 ©2003 Fairchild Semiconductor Corporation FDP7030BL/FDB7030BL Rev D1(W) FDP7030BL/FDB7030BL N-Channel Logic Level PowerTrench ® MOSFET General Description This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Features • 60 A, 30 V RDS(ON) = 9 m Ω @ V GS = 10 V RDS(ON) = 12 m Ω @ V GS = 4.5 V • Critical DC electrical parameters specified at elevated temperature • High performance trench technology for extremely low RDS(ON) • 175°C maximum junction temperature rating S G D TO-220 FDP Series D G S TO-263AB FDB Series S G D Absolute Maximum Ratings TA=25 oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ± 20 V ID Drain Current – Continuous (Note 1) 60 A – Pulsed (Note 1) 180 PD Total Power Dissipation @ TC = 25 °C 60 W Derate above 25 °C 0.4 W/ °C TJ, TSTG Operating and Storage Junction Temperature Range –65 to +175 °C Thermal Characteristics RθJC Thermal Resistance, Junction-to-Case 2.5 °C/W RθJA Thermal Resistance, Junction-to-Ambient 62.5 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDB7030BL FDB7030BL 13’’ 24mm 800 units FDP7030BL FDP7030BL Tube n/a 45 |
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