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FDB6676S Datasheet(PDF) 3 Page - Fairchild Semiconductor |
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FDB6676S Datasheet(HTML) 3 Page - Fairchild Semiconductor |
3 / 6 page FDP6676S/FDB6676S Rev C (W) Typical Characteristics 0 25 50 75 100 125 150 0 1234 VDS, DRAIN-SOURCE VOLTAGE (V) 2.5V 3.5V V GS = 10V 4.5V 3.0V 0.8 1 1.2 1.4 1.6 1.8 0 255075 100 125 150 ID, DRAIN CURRENT (A) V GS = 2.5V 4.5V 3.0V 3.5V 10V Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.6 0.8 1 1.2 1.4 1.6 -55 -35 -15 5 25 45 65 85 105 TJ, JUNCTION TEMPERATURE ( oC) I D = 38A V GS =10V 120 0.004 0.006 0.008 0.01 0.012 0.014 0.016 2468 10 VGS, GATE TO SOURCE VOLTAGE (V) ID = 19A T A = 125 oC TA = 25 oC Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 0 15 30 45 60 75 90 11.5 22.5 3 VGS, GATE TO SOURCE VOLTAGE (V) T A = 125 oC 25 oC -55 oC VDS = 5V 0.01 0.1 1 10 100 00.2 0.4 0.6 0.8 VSD, BODY DIODE FORWARD VOLTAGE (V) T A = 125 oC 25 oC -55 oC VGS = 0V Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. |
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Similar Description - FDB6676S |
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