FDB6030 datasheet(1/10 Pages) FAIRCHILD

Part #	FDB6030

Description	N-Channel Logic Level PowerTrench MOSFET

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Manufacturer	FAIRCHILD [Fairchild Semiconductor]

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FDP6030BL/FDB6030BL Rev.C

July 2000

200 Fairchild Semiconductor International

FDP6030BL/FDB6030BL

N-Channel Logic Level PowerTrench



 MOSFET

Features

• 40 A, 30 V. R

DS(ON) = 0.018 Ω @ VGS = 10 V

R

DS(ON) = 0.024 Ω @ VGS = 4.5 V.

• Critical DC electrical parameters specified at elevated

temperature.

• Rugged internal source-drain diode can eliminate the

need for an external Zener diode transient suppressor.

• High performance trench technology for

extremely low R

DS(ON).

• 175

°C maximum junction temperature rating.

Absolute Maximum Ratings T

C = 25°C unless otherwise noted

Symbol

Parameter

FDP6030BL

FDB6030BL

Units

VDSS

Drain-Source Voltage

30

V

VGSS

Gate-Source Voltage

±20

V

ID

Maximum Drain Current

- Continuous

(Note 1)

40

- Pulsed

120

A

Total Power Dissipation @ TC = 25°C

60

W

PD

Derate above 25°C

0.36

W/°C

TJ, TSTG

Operating and Storage Junction Temperature Range

-65 to +175

°C

Thermal Characteristics

RθJC

Thermal Resistance, Junction-to-Case

2.5

°C/W

RθJA

Thermal Resistance, Junction-to-Ambient

62.5

°C/W

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape Width

Quantity

FDB6030BL

13’’

24mm

800

FDP6030BL

Tube

N/A

45

S

D

G

S

G

D

TO-220

FDP Series

D

G

S

TO-263AB

FDB Seri es

General Description

This N-Channel Logic Level MOSFET has been designed

specifically to improve the overall efficiency of DC/DC

converters using either synchronous or conventional

switching PWM controllers.

These MOSFETs feature faster switching and lower gate

charge than other MOSFETs with comparable R

DS(on)

specifications resulting in DC/DC power supply designs

with higher overall efficiency.

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