©2002 Fairchild Semiconductor Corporation

September 2002

FDP42AN15A0 / FDB42AN15A0 Rev. C

FDP42AN15A0 / FDB42AN15A0

150V, 35A, 42m

Ω

Features

• Low Miller Charge

• Low Qrr Body Diode

• UIS Capability (Single Pulse and Repetitive Pulse)

• Qualified to AEC Q101

Formerly developmental type 82864

Applications

• DC/DC Converters and Off-line UPS

• Distributed Power Architectures and VRMs

• Primary Switch for 24V and 48V Systems

• High Voltage Synchronous Rectifier

• Direct Injection / Diesel Injection Systems

• 42V Automotive Load Control

• Electronic Valve Train Systems

Thermal Characteristics

This product has been designed to meet the extreme test conditions and environment demanded by the automotive

industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/

Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.

All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality

systems certification.

Symbol

Parameter

Ratings

Units

Drain to Source Voltage

150

V

Gate to Source Voltage

±20

V

Drain Current

35

A

24

5

A

Pulsed

Figure 4

A

Single Pulse Avalanche Energy (Note 1)

90

mJ

Power dissipation

150

W

Derate above 25

W/

Operating and Storage Temperature

-55 to 175

Thermal Resistance Junction to Case TO-220,TO-263

1.0

Thermal Resistance Junction to Ambient TO-220,TO-263

62

Thermal Resistance Junction to Ambient TO-263, 1in

43

D

G

S

TO-263AB

FDB SERIES

GATE

SOURCE

DRAIN

(FLANGE)

TO-220AB

DRAIN

(FLANGE)

FDP SERIES

GATE

DRAIN

SOURCE