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M393B1G70BH0 Datasheet(PDF) 5 Page - Samsung semiconductor

Part # M393B1G70BH0
Description  240pin Registered DIMM based on 4Gb B-die
Download  55 Pages
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

M393B1G70BH0 Datasheet(HTML) 5 Page - Samsung semiconductor

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DDR3 SDRAM
Rev. 1.5
Registered DIMM
1. DDR3 Registered DIMM Ordering Information
NOTE :
1. "##" - F8/H9/K0/MA
2. F8(1066Mbps 7-7-7) / H9(1333Mbps 9-9-9) / K0(1600Mbps 11-11-11) / MA(1866Mbps 13-13-13)
- DDR3-1866(13-13-13) is backward compatible to DDR3-1600(11-11-11), DDR3-1333(9-9-9), DDR3-1066(7-7-7)
- DDR3-1600(11-11-11) is backward compatible to DDR3-1333(9-9-9), DDR3-1066(7-7-7)
- DDR3-1333(9-9-9) is backward compatible to DDR3-1066(7-7-7)
2. Key Features
• JEDEC standard 1.5V ± 0.075V Power Supply
•VDDQ = 1.5V ± 0.075V
• 400MHz fCK for 800Mb/sec/pin, 533MHz fCK for 1066Mb/sec/pin, 667MHz fCK for 1333Mb/sec/pin, 800MHz fCK for 1600Mb/sec/pin,
933MHz fCK for 1866Mb/sec/pin
• 8 independent internal bank
• Programmable CAS Latency: 6,7,8,9,10,11,13
• Programmable Additive Latency(Posted CAS) : 0, CL - 2, or CL - 1 clock
• Programmable CAS Write Latency(CWL) = 5(DDR3-800), 6(DDR3-1066), 7(DDR3-1333), 8(DDR3-1600) and 9(DDR3-1866)
• Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or
write [either On the fly using A12 or MRS]
• Bi-directional Differential Data Strobe
• On Die Termination using ODT pin
• Average Refresh Period 7.8us at lower then TCASE 85C, 3.9us at 85C < TCASE 95C
• Asynchronous Reset
3. Address Configuration
Part Number2
Density
Organization
Component Composition1
Number of
Rank
Height
M393B1G70BH0-CF8/H9/K0/MA
8GB
1Gx72
1Gx4(K4B4G0446B-HC##)*18
1
30mm
M393B1G73BH0-CF8/H9/K0/MA
8GB
1Gx72
512Mx8(K4B4G0846B-HC##)*18
2
30mm
M393B2G70BH0-CF8/H9/K0/MA
16GB
2Gx72
1Gx4(K4B4G0446B-HC##)*36
2
30mm
M393B2G73BH0-CF8/H9
16GB
2Gx72
512Mx8(K4B4G0846B-HC##)*36
4
30mm
M393B4G70BM0-CF8/H9
32GB
4Gx72
DDP 2Gx4(K4B8G0446B-MC##)*36
4
30mm
Speed
DDR3-800
DDR3-1066
DDR3-1333
DDR3-1600
DDR3-1866
Unit
6-6-6
7-7-7
9-9-9
11-11-11
13-13-13
tCK(min)
2.5
1.875
1.5
1.25
1.071
ns
CAS Latency
6
7
9
11
13
nCK
tRCD(min)
15
13.125
13.5
13.75
13.91
ns
tRP(min)
15
13.125
13.5
13.75
13.91
ns
tRAS(min)
37.5
37.5
36
35
34
ns
tRC(min)
52.5
50.625
49.5
48.75
47.91
ns
Organization
Row Address
Column Address
Bank Address
Auto Precharge
1Gx4(4Gb) based Module
A0-A15
A0-A9, A11
BA0-BA2
A10/AP
512Mx8(4Gb) based Module
A0-A15
A0-A9
BA0-BA2
A10/AP
2Gx4(8Gb DDP) based Module
A0-A15
A0-A9, A11
BA0-BA2
A10/AP


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