BUK761R4-30E datasheet(6/14 Pages) NXP

Part #	BUK761R4-30E

Description	N-channel TrenchMOS standard level FET

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NXP Semiconductors

BUK761R4-30E

N-channel TrenchMOS standard level FET

BUK761R4-30E

All information provided in this document is subject to legal disclaimers.

Product data sheet

5 October 2012

6 / 13

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Ciss

input capacitance

-

7184

9580

pF

Coss

output capacitance

-

1710

2052

pF

Crss

reverse transfer

capacitance

VGS = 0 V; VDS = 25 V; f = 1 MHz;

Tj = 25 °C; Fig. 15

-

956

1282

pF

td(on)

turn-on delay time

-

31.3

-

ns

tr

rise time

-

52.3

-

ns

td(off)

turn-off delay time

-

74.4

-

ns

tf

fall time

VDS = 25 V; RL = 1 Ω; VGS = 10 V;

RG(ext) = 5 Ω

-

59.7

-

ns

LD

internal drain

inductance

from upper edge of drain mounting

base to center of die

-

2.5

-

nH

LS

internal source

inductance

from source lead to source bonding

pad

-

7.5

-

nH

Source-drain diode

VSD

source-drain voltage

IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 16

-

0.78

1.2

V

trr

reverse recovery time

-

49

-

ns

Qr

recovered charge

IS = 20 A; dIS/dt = -100 A/µs; VGS = 0 V;

VDS = 25 V

-

66

-

nC

003aah649

0

120

240

360

0

1

2

3

VDS(V)

ID

(A)

VGS(V) = 4

4.5

5

6

8

10

5.5

Tj = 25 °C; tp = 300 μs

Fig. 6. Output characteristics; drain current as a

function of drain-source voltage; typical values

003aah650

0

2

4

6

8

0

5

10

15

20

VGS(V)

RDSon

(mΩ)

Fig. 7. Drain-source on-state resistance as a function

of gate-source voltage; typical values

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