1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Low Noise Transistor

NPN Silicon

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector – Emitter Voltage

VCEO

45

Vdc

Collector – Base Voltage

VCBO

45

Vdc

Emitter – Base Voltage

VEBO

6.5

Vdc

Collector Current — Continuous

IC

200

mAdc

Total Device Dissipation @ TA = 25°C

Derate above 25

°C

PD

625

5.0

mW

mW/

°C

Total Device Dissipation @ TC = 25°C

Derate above 25

°C

PD

1.5

12

Watts

mW/

°C

Operating and Storage Junction

Temperature Range

TJ, Tstg

– 55 to +150

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Ambient

RqJA(1)

200

°C/W

Thermal Resistance, Junction to Case

RqJC

83.3

°C/W

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector – Emitter Breakdown Voltage(2)

(IC = 10 mAdc, IB = 0)

V(BR)CEO

45

—

—

Vdc

Collector – Base Breakdown Voltage

(IC = 100 mAdc, IE = 0)

V(BR)CBO

45

—

—

Vdc

Emitter–Base Breakdown Voltage

(IE = 10 µAdc, IC = 0)

V(BR)EBO

6.5

—

—

Vdc

Collector Cutoff Current

(VCB = 30 Vdc, IE = 0)

ICBO

—

1.0

50

nAdc

1. R

θJA is measured with the device soldered into a typical printed circuit board.

2. Pulse Test: Pulse Width

≤ 300 ms, Duty Cycle ≤ 2.0%.

Preferred devices are Motorola recommended choices for future use and best overall value.

Order this document

by MPSA18/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

MPSA18

CASE 29–04, STYLE 1

TO–92 (TO–226AA)

1

2

3

Motorola Preferred Device

COLLECTOR

3

2

BASE

1

EMITTER