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VN2406L Datasheet(PDF) 2 Page - ON Semiconductor |
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VN2406L Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 3 page VN2406L http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit STATIC CHARACTERISTICS Drain−Source Breakdown Voltage (VGS = 0, ID = 100 μA) V(BR)DSS 240 − Vdc Zero Gate Voltage Drain Current (VDS = 120 Vdc, VGS = 0) (VDS = 120 Vdc, VGS = 0, TA = 125°C) IDSS − − 10 500 μAdc Gate− Body Leakage (VDS = 0, VGS = ±15 V) IGSS − ±100 nAdc Gate Threshold Voltage (VDS = VGS, ID = 1.0 mA) VGS(th) 0.8 2.0 Vdc On−State Drain Current (Note 1) (VGS = 10 V, VDS ≥ 2.0 VDS(on)) ID(on) 1.0 − Adc Drain−Source On Resistance (Note 1) (VGS = 2.5 V, ID = 0.1 A) (VGS = 10 V, ID = 0.5 A) rDS(on) − − 10 6.0 Ω Forward Transconductance (Note 1) (VDS = 10 V, ID = 0.5 A) gfs 300 − mS DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Ciss − 125 pF Output Capacitance Coss − 50 pF Reverse Transfer Capacitance Crss − 20 pF SWITCHING CHARACTERISTICS Turn−On Time (VDD = 60 Vdc, ID = 0.4 A, RL = 150 Ω, RG = 25 Ω) t(on) − 8.0 ns t(r) − 8.0 ns Turn−Off Time t(off) − 23 ns t(f) − 34 ns 1. Pulse Test; Pulse Width < 300 μs, Duty Cycle v 2.0%. |
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