VN2406L datasheet(2/3 Pages) ONSEMI

Part #	VN2406L

Description	Small Signal MOSFET 200 mAmps, 240 Volts

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Manufacturer	ONSEMI [ON Semiconductor]

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VN2406L

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

STATIC CHARACTERISTICS

Drain−Source Breakdown Voltage

(VGS = 0, ID = 100 μA)

V(BR)DSS

240

−

Vdc

Zero Gate Voltage Drain Current

(VDS = 120 Vdc, VGS = 0)

(VDS = 120 Vdc, VGS = 0, TA = 125°C)

IDSS

−

10

500

μAdc

Gate− Body Leakage

(VDS = 0, VGS = ±15 V)

IGSS

−

±100

nAdc

Gate Threshold Voltage

(VDS = VGS, ID = 1.0 mA)

VGS(th)

0.8

2.0

Vdc

On−State Drain Current (Note 1)

(VGS = 10 V, VDS ≥ 2.0 VDS(on))

ID(on)

1.0

−

Adc

Drain−Source On Resistance (Note 1)

(VGS = 2.5 V, ID = 0.1 A)

(VGS = 10 V, ID = 0.5 A)

rDS(on)

−

10

6.0

Ω

Forward Transconductance (Note 1)

(VDS = 10 V, ID = 0.5 A)

gfs

300

−

mS

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = 25 Vdc, VGS = 0,

f = 1.0 MHz)

Ciss

−

125

pF

Output Capacitance

Coss

−

50

pF

Reverse Transfer Capacitance

Crss

−

20

pF

SWITCHING CHARACTERISTICS

Turn−On Time

(VDD = 60 Vdc, ID = 0.4 A,

RL = 150 Ω, RG = 25 Ω)

t(on)

−

8.0

ns

t(r)

−

8.0

ns

Turn−Off Time

t(off)

−

23

ns

t(f)

−

34

ns

1. Pulse Test; Pulse Width < 300 μs, Duty Cycle v 2.0%.

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