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ZVN3310F Datasheet(PDF) 1 Page - Diodes Incorporated |
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ZVN3310F Datasheet(HTML) 1 Page - Diodes Incorporated |
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1 / 2 page  SOT23 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 OCTOBER 1995 7 FEATURES * 100 Volt VDS *RDS(on)=20Ω COMPLEMENTARY TYPE - ZVN3310F PARTMARKING DETAIL - MR ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS -100 V Continuous Drain Current at Tamb=25°C ID 75 mA Pulsed Drain Current IDM -1.2 A Gate Source Voltage VGS ± 20 V Power Dissipation at Tamb=25°C Ptot 330 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb= 25°C unless otherwise stated). PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS. Drain-Source Breakdown Voltage BVDSS -100 V ID=-1mA, VGS=0V Gate-Source Threshold Voltage VGS(th) -1.5 -3.5 V ID=-1mA, VDS= VGS Gate-Body Leakage IGSS -20 nA VGS=± 20V, VDS=0V Zero Gate Voltage Drain Current IDSS -1 -50 µ A µ A VDS=-100V, VGS=0 VDS=-80V, VGS=0V, T=125°C(2) On-State Drain Current(1) ID(on) -300 mA VDS=-25 V, VGS=-10V Static Drain-Source On-State Resistance (1) RDS(on) 20 Ω VGS=-10V, ID=-150mA Forward Transconductance (1)(2) gfs 50 mS VDS=-25V, ID=-150mA Input Capacitance (2) Ciss 50 pF Common Source Output Capacitance (2) Coss 15 pF VDS=-25V, VGS=0V, f=1MHz Reverse Transfer Capacitance (2) Crss 5pF Turn-On Delay Time (2)(3) td(on) 8ns VDD≈-25V, ID=-150mA Rise Time (2)(3) tr 8ns Turn-Off Delay Time (2)(3) td(off) 8ns Fall Time (2)(3) tf 8ns (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. (3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator ZVP3310F D G S TYPICAL CHARACTERISTICS Voltage Saturation Characteristics VGS-Gate Source Voltage (Volts) 0 -10 -6 -2 -4 -8 0-2 -4 -6 -8 -10 ID= -0.3A -0.15A -0.075A -2 -4 -6 -8 -10 Saturation Characteristics 0 VDS - Drain Source Voltage (Volts) -5V -4V -0.6 -0.4 -0.2 -10V -8V -6V -9V -7V VGS= -20V -12V -16V -14V Normalised RDS(on) and VGS(th) v Temperature Tj-Junction Temperature (°C) -40 -20 0 20 40 60 80 120 100 140 160 ID= -150mA VGS= -10V ID= -1mA VGS= VDS 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.6 0.8 2.6 180 Transconductance v drain current ID- Drain Current (Amps) BI 0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 0 VDS= -10V 30 20 10 40 80 70 60 50 90 100 0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 0 VDS= -10V 30 20 10 40 80 70 60 50 90 100 VDS-Drain Source Voltage (Volts) Capacitance v drain-source voltage Coss Ciss Crss 0 -20 -40 -60 -80 VGS= 0V f =1MHz 0 30 20 10 40 50 0 Q-Charge (nC) / 5 Gate charge v gate-source voltage -6 -8 -10 -14 -16 -12 -4 -2 0 VDS= -25V ID= - 0.2A -50V -100V 0.2 0.4 0.6 0.8 1.0 1.2 ZVP3310F 3 - 436 3 - 437 |
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