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UCC27324DGNRG4 Datasheet(PDF) 3 Page - Texas Instruments |
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UCC27324DGNRG4 Datasheet(HTML) 3 Page - Texas Instruments |
3 / 28 page UCC27323, UCC27324, UCC27325 UCC37323, UCC37324, UCC37325 www.ti.com SLUS492H – JUNE 2001 – REVISED MAY 2013 ABSOLUTE MAXIMUM RATINGS (1) (2) over operating free-air temperature range (unless otherwise noted) MIN MAX UNIT Analog input voltage (INA, INB) –0.3 to VDD + 0.3 V not to exceed 16 V Output body diode DC current (OUTA, OUTB) 0.2 IOUT_DC Output current (OUTA, OUTB) DC 0.2 A IOUT_PULSE Pulsed (0.5 µs) 4.5 D Power dissipation at TA = 25°C D package 1.14 W DGN package 2.12 P package 780 mW Output voltage (OUTA, OUTB) 16 V VDD Supply voltage –0.3 16 V TJ Junction operating temperature –55 150 Tstg Storage temperature –65 150 °C Lead temperature (soldering, 10 sec.) 300 (1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. (2) All voltages are with respect to GND. Currents are positive into, negative out of the specified terminal. ELECTRICAL CHARACTERISTICS VDD = 4.5 to 15 V, TA = TJ (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT INPUT (INA, INB) VIN_H Logic 1 input threshold 2 V VIN_L Logic 0 input threshold 1 Input current 0 V ← VIN ← VDD –10 10 µA OUTPUT (OUTA, OUTB) Output current VDD = 14 V (1) 4 V VOH High-level output voltage VOH = VDD – VOUT, IOUT = –10 mA 300 450 mV VOL Low-level output level IOUT = 10 mA 22 45 Output resistance high TA = 25°C, IOUT = –10 mA, VDD = 14 V (2) 25 30 35 TA = full range, IOUT = –10 mA, VDD = 14 V (2) 18 42 Ω Output resistance low TA = 25°C, IOUT = 10 mA, VDD = 14 V (2) 1.9 2.2 2.5 TA = full range, IOUT = 10 mA, VDD = 14 V (2) 1.2 4 Latch-up protection 500 mA (1) The pullup and pulldown circuits of the driver are bipolar and MOSFET transistors in parallel. The pulsed output current rating is the combined current from the bipolar and MOSFET transistors. (2) The pullup and pulldown circuits of the driver are bipolar and MOSFET transistors in parallel. The output resistance is the RDS(ON) of the MOSFET transistor when the voltage on the driver output is less than the saturation voltage of the bipolar transistor. Copyright © 2001–2013, Texas Instruments Incorporated Submit Documentation Feedback 3 Product Folder Links: UCC27323 UCC27324 UCC27325 UCC37323 UCC37324 UCC37325 |
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