NPN MPS6601 MPS6602 PNP MPS6651 MPS6652

5

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Figure 14. Base–Emitter Temperature

Coefficient

Figure 15. Base–Emitter Temperature

Coefficient

Figure 16. Safe Operating Area

Figure 17. Safe Operating Area

Figure 18. MPS6601/6602 Saturation Region

Figure 19. MPS6651/6652 Saturation Region

100

1000

1.0

IC, COLLECTOR CURRENT (mA)

–0.8

–1.2

–1.6

–2.0

–2.4

–2.8

IC, COLLECTOR CURRENT (mA)

–100

–1000

–1.0

–1.2

–1.6

–2.0

–2.4

–2.8

10

1.0

VCE, COLLECTOR–EMITTER VOLTAGE

500

200

100

50

20

10

VCE, COLLECTOR–EMITTER VOLTAGE

–10

–40

–1.0

–500

–200

–100

–50

–20

–10

–20

20

0.1

10

0.01

IB, BASE CURRENT (mA)

1.0

0.8

0.6

0.4

0.2

0

IB, BASE CURRENT (mA)

–0.1

–100

–0.01

–1.0

–0.8

–0.6

–0.4

–0.2

0

–1.0

1.0

TJ = 25°C

NPN

PNP

10

RqVB for VBE

–10

–0.8

RqVB for VBE

–2.0

–5.0

–1 k

2.0

5.0

40

1 k

–10

100

IC =

100 mA

IC =

50 mA

IC =

250 mA

IC =

500 mA

IC =

1000 mA

IC =

10 mA

TJ = 25°C

IC =

–100 mA

IC =

–50 mA

IC =

–250 mA

IC =

–500 mA

IC =

–1000 mA

IC =

–10 mA

1.0 MS

1.0 s

TC = 25°C

MPS6601

CURRENT LIMIT

THERMAL LIMIT

SECOND BREAKDOWN LIMIT

MPS6602

1.0 MS

1.0 s

TC = 25°C

MPS6651

CURRENT LIMIT

THERMAL LIMIT

SECOND BREAKDOWN LIMIT

MPS6652