©2011 Fairchild Semiconductor Corporation

2

www.fairchildsemi.com

FDMC86102LZ Rev. C

Off Characteristics

On Characteristics

Dynamic Characteristics

Switching Characteristics

Drain-Source Diode Characteristics

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Drain to Source Breakdown Voltage

100

V

ΔBV

DSS

ΔT

J

Breakdown Voltage Temperature

Coefficient

71

mV/°C

Zero Gate Voltage Drain Current

1

μA

Gate to Source Leakage Current

±10

μA

Gate to Source Threshold Voltage

1.0

1.6

2.2

V

ΔV

GS(th)

ΔT

J

Gate to Source Threshold Voltage

Temperature Coefficient

-6

mV/°C

Static Drain to Source On Resistance

19

24

m

Ω

25

35

31

40

Forward Transconductance

24

S

Input Capacitance

f = 1 MHz

969

1290

pF

Output Capacitance

181

240

pF

Reverse Transfer Capacitance

9

15

pF

Gate Resistance

0.4

Ω

Turn-On Delay Time

7.1

15

ns

Rise Time

2.3

10

ns

Turn-Off Delay Time

19

35

ns

Fall Time

2.5

10

ns

Total Gate Charge

15.3

22

nC

Total Gate Charge

7.6

11

nC

Total Gate Charge

2.4

nC

Gate to Drain “Miller” Charge

2.5

nC

Source to Drain Diode Forward Voltage

(Note 2)

0.80

1.3

V

(Note 2)

0.72

1.2

Reverse Recovery Time

42

67

ns

Reverse Recovery Charge

40

64

nC

NOTES:

the user's board design.

2. Pulse Test: Pulse Width < 300

μs, Duty cycle < 2.0%.

4. The diode connected between gate and source serves only as protection against ESD. No gate overvoltage rating is implied.

53 °C/W when mounted on a

a.

125 °C/W when mounted on

a minimum pad of 2 oz copper

b.