FDC640P, Rev.C

Figure 7. Gate-Charge Characteristics.

Figure 8. Capacitance Characteristics.

Figure 9. Maximum Safe Operating Area.

Figure 10. Single Pulse Maximum

Power Dissipation.

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1b.

Transient themal response will change depending on the circuit board design.

0.00001

0.0001

0.001

0.01

0.1

1

10

100

300

0.005

0.01

0.02

0.05

0.1

0.2

0.5

1

t , TIME (sec)

1

Single Pulse

D = 0.5

0.1

0.05

0.02

0.01

0.2

Duty Cycle, D = t / t

1

2

R

(t) = r(t) * R

R

= 156°C/W

T - T

= P * R

(t)

A

J

P(pk)

θJA

θJA

θJA

θJA

0

1

2

3

4

5

0.1

1

10

100

1000

SINGLE PULSE TIME (SEC)

SINGLE PULSE

0

1

2

3

4

5

02

46

8

10

12

-10V

-15V

0.01

0.1

1

10

100

0.1

1

10

100

DC

1s

100ms

10ms

1ms

100

µs

SINGLE PULSE

T

0

200

400

600

800

1000

1200

1400

1600

0

5

10

15

20

f = 1MHz