VS-11DQ09, VS-11DQ09-M3, VS-11DQ10, VS-11DQ10-M3

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Vishay Semiconductors

Revision: 21-Sep-11

2

Document Number: 93207

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Note

Note

(1)

thermal runaway condition for a diode on its own heatsink

ELECTRICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum forward voltage drop

See fig. 1

1 A

0.85

V

2 A

0.96

1 A

0.68

2 A

0.78

Maximum reverse leakage current

See fig. 2

0.5

mA

1.0

Typical junction capacitance

35

pF

Typical series inductance

Measured lead to lead 5 mm from package body

8.0

nH

Maximum voltage rate of change

dV/dt

10 000

V/μs

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum junction and storage

temperature range

- 40 to 150

°C

Maximum thermal resistance,

junction to ambient

DC operation

Without cooling fin

100

°C/W

Typical thermal resistance,

junction to lead

DC operation

See fig. 4

81

Approximate weight

0.33

g

0.012

oz.

Marking device

Case style DO-204AL (DO-41)

11DQ09

11DQ10

dP

tot

dT

J

-------------

1

R

thJA

--------------

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