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F5D2 Datasheet(PDF) 1 Page - Fairchild Semiconductor

Part # F5D2
Description  AlGaAs INFRARED EMITTING DIODE
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Manufacturer  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

F5D2 Datasheet(HTML) 1 Page - Fairchild Semiconductor

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0.040 (1.02)
0.100 (2.54)
0.050 (1.27)
45°
0.040 (1.02)
13
0.030 (0.76)
NOM
0.184 (4.67)
0.209 (5.31)
1.00 (25.4)
MIN
0.255 (6.48)
ANODE
(CASE)
Ø0.020 (0.51) 2X
1. Derate power dissipation linearly 1.70 mW/°C above 25°C ambient.
2. Derate power dissipation linearly 13.0 mW/°C above 25°C case.
3. RMA flux is recommended.
4. Methanol or isopropyl alcohols are recommended as cleaning
agents.
5. Soldering iron tip 1/16” (1.6mm) minimum from housing.
6. As long as leads are not under any stress or spring tension
7. Total power output, PO, is the total power radiated by the device into
a solid angle of 2
! steradians.
PACKAGE DIMENSIONS
FEATURES
• Good optical to mechanical alignment
• Mechanically and wavelength matched
to the TO-18 series phototransistor
• Hermetically sealed package
• High irradiance level
Parameter
Symbol
Rating
Unit
Operating Temperature
TOPR
-65 to +125
°C
Storage Temperature
TSTG
-65 to +150
°C
Soldering Temperature (Iron)(3,4,5 and 6)
TSOL-I
240 for 5 sec
°C
Soldering Temperature (Flow)(3,4 and 6)
TSOL-F
260 for 10 sec
°C
Continuous Forward Current
IF
100
mA
Forward Current (pw, 10µs; 100Hz)
IF
3A
Forward Current (pw, 1µs; 200Hz)
IF
10
A
Reverse Voltage
VR
3V
Power Dissipation (TA = 25°C)(1)
PD
170
mW
Power Dissipation (TC = 25°C)(2)
PD
1.3
W
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
NOTES:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ± .010 (.25) on all non-nominal dimensions
unless otherwise specified.
F5D1/2/3
AlGaAs INFRARED EMITTING DIODE
DESCRIPTION
• The F5D series is a 880 nm LED in a
narrow angle, TO-46 package.
ANODE
(Connected
To Case)
3
1
CATHODE
SCHEMATIC
PARAMETER
TEST CONDITIONS
SYMBOL
MIN
TYP
MAX
UNITS
Peak Emission Wavelength
IF = 100 mA
"
P
880
nm
Emission Angle at 1/2 Power
IF = 100 mA
#
±8
Deg.
Forward Voltage
IF = 100 mA
VF
1.7
V
Reverse Leakage Current
VR = 3 V
IR
10
µA
Total Power F5D1(7)
IF = 100 mA
PO
12.0
mW
Total Power F5D2(7)
IF = 100 mA
PO
9.0
mW
Total Power F5D3(7)
IF = 100 mA
PO
10.5
mW
Rise Time 0-90% of output
tr
1.5
µs
Fall Time 100-10% of output
tf
1.5
µs
ELECTRICAL / OPTICAL CHARACTERISTICS (TA =25°C) (All measurements made under pulse conditions)
 2001 Fairchild Semiconductor Corporation
DS300286
4/24/01
1 OF 3
www.fairchildsemi.com


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