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AZ7045RTR-E1 Datasheet(PDF) 5 Page - BCD Semiconductor Manufacturing Limited |
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AZ7045RTR-E1 Datasheet(HTML) 5 Page - BCD Semiconductor Manufacturing Limited |
5 / 13 page 5 BCD Semiconductor Manufacturing Limited VOLTAGE DETECTOR AZ70XX Data Sheet Oct. 2011 Rev. 2. 2 Parameter Symbol Conditions Min Typ Max Unit Detect Voltage VDET RL=200Ω (Note 2) VOL ≤ 0.4V AZ7023R/Z 2.15 2.3 2.45 V AZ7025R/Z 2.35 2.5 2.65 AZ7027R/Z 2.55 2.7 2.85 AZ7029R/Z 2.75 2.9 3.05 AZ7031R/Z 2.95 3.1 3.25 AZ7033R/Z 3.15 3.3 3.45 AZ7042R/Z 4.05 4.2 4.35 AZ7045R/Z 4.35 4.5 4.65 Low-level Output Voltage VOL VCC=VDET(min)-0.05V RL=200Ω (Note 2) 0.4 V Output Leakage Current IOH VCC=18V 0.1 µA Hysteresis Voltage VHYS RL=200Ω (Note 2) 30 50 100 mV Detect Voltage Temperature Coefficient ∆VDET/(VDET × ∆T) RL=200Ω (Note 2) ±0.01 % /oC Circuit Current at On Time ICCL VCC=VDET(min)-0.05V 300 500 µA Circuit Current at Off Time ICCH VCC=5.25V 30 50 µA Minimum Operating Voltage VOPR RL=200Ω (Note 2) VOL ≤ 0.4V 0.8 V “ L”Transmission Delay Time tpHL VCC changed from 5.25V to VDET(min)-0.05V, RL=1.0KΩ, CL=100p (Note 3) 10 µs “ H”Transmission Delay Time tpLH VCC changed from VDET(min)- 0.05V to 5.25V, RL=1.0KΩ, CL=100p (Note 3) 15 µs Output Current at On Time IOL Ⅰ VCC=VDET(min)-0.05V TA=25oC (Note 4) 20 mA IOL Ⅱ VCC=VDET(min)-0.05V TA=-40 to 85 oC (Note 4) 16 Thermal Resistance (Junction to Case) θJC TO-92 72 oC/W SOT-89 74 Electrical Characteristics TA=25oC, unless otherwise specified. Note 2: See test circuit 1 and Figure 12. Note 3: See test circuit 2 and Figure 12. Note 4: See test circuit 3. Adjusting the regulative power source until the reading value of voltage meter V is 0.4V, the reading value of current meter A is defined as "Output Current at On Time". |
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