AM30N02-40D datasheet(1/3 Pages) ANALOGPOWER

Part #	AM30N02-40D

Description	N-Channel 20-V (D-S) MOSFET

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Manufacturer	ANALOGPOWER [Analog Power]

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AM30N02-40D

Analog Power

November, 2003 - Rev. A

PRELIMINARY

Publication Order Number:

DS-AM30N02-40_C

These miniature surface mount MOSFETs utilize

High Cell Density process. Low r

DS(on) assures

minimal power loss and conserves energy, making

this device ideal for use in power management

circuitry. Typical applications are PWMDC-DC

converters, power management in portable and

battery-powered products such as computers,

printers, battery charger, telecommunication power

system, and telephones power system.

VDS (V)

rDS(on) m(Ω)ID (A)

29 @ VGS = 4.5V

34

43 @ VGS = 2.5V

22

PRODUCT SUMMARY

20

N-Channel 20-V (D-S) MOSFET

•Low r

DS(on) Provides Higher Efficiency and

Extends Battery Life

•

Miniature TO-252 Surface Mount Package

Saves Board Space

•

High power and current handling capability

•

Low side high current DC-DC Converter

applications

Notes

a.

Surface Mounted on 1” x 1” FR4 Board.

b.

Pulse width limited by maximum junction temperature

Symbol

Limit

Units

VDS

20

VGS

±12

Continuous Drain Current

a

TC=25

oC ID

34

IDM

40

IS

30

A

Power Dissipation

a

TC=25

oC PD

50.0

W

TJ, Tstg -55 to 175

oC

Operating Junction and Storage Temperature Range

Continuous Source Current (Diode Conduction)

a

ABSOLUTE MAXIMUM RATINGS (TA = 25

oC UNLESS OTHERWISE NOTED)

Parameter

Pulsed Drain Current

b

V

Gate-Source Voltage

Drain-Source Voltage

A

Parameter

Symbol

Maximum

Units

Maximum Junction-to-Ambient

a

RθJA

50

oC/W

Maximum Junction-to-Case

RθJC

3.0

oC/W

THERMAL RESISTANCE RATINGS

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