1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Switching Transistors

PNP Silicon

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector – Emitter Voltage

VCEO

–25

Vdc

Collector – Emitter Voltage

VCES

–25

Vdc

Collector – Base Voltage

VCBO

–25

Vdc

Emitter – Base Voltage

VEBO

–4.0

Vdc

Collector Current — Continuous

IC

–500

mAdc

Total Device Dissipation @ TA = 25°C

Derate above 25

°C

PD

625

5.0

mW

mW/

°C

Total Device Dissipation @ TC = 25°C

Derate above 25

°C

PD

1.5

12

Watts

mW/

°C

Operating and Storage Junction

Temperature Range

TJ, Tstg

– 55 to +150

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Ambient

RqJA(1)

200

°C/W

Thermal Resistance, Junction to Case

RqJC

83.3

°C/W

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector – Emitter Breakdown Voltage

(IC = –100 mAdc, VBE = 0)

V(BR)CES

–25

—

Vdc

Collector – Emitter Sustaining Voltage(2)

(IC = –10 mAdc, IB = 0)

VCEO(sus)

–25

—

Vdc

Collector – Base Breakdown Voltage

(IC = –100 mAdc, IE = 0)

V(BR)CBO

–25

—

Vdc

Emitter – Base Breakdown Voltage

(IE = –100 mAdc, IC = 0)

V(BR)EBO

–4.0

—

Vdc

Collector Cutoff Current

(VCE = –15 Vdc, VBE = 0)

(VCE = –15 Vdc, VBE = 0, TA = –65°C)

ICES

—

—

–0.035

–2.0

mAdc

Emitter Cutoff Current

(VEB = –3.0 V, IC = 0)

IEBO

—

–35

nA

Base Current

(VCE = –15 Vdc, VBE = 0)

IB

—

–0.035

mAdc

1. RqJA is measured with the device soldered into a typical printed circuit board.

2. Pulse Test: Pulse Width

v 300 ms; Duty Cycle v 2.0%.

Order this document

by MPS3638/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

MPS3638,A

CASE 29–04, STYLE 1

TO–92 (TO–226AA)

1

2

3

COLLECTOR

3

2

BASE

1

EMITTER