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OPA9445LSP Datasheet(PDF) 1 Page - KODENSHI_AUK CORP. |
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OPA9445LSP Datasheet(HTML) 1 Page - KODENSHI_AUK CORP. |
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1 / 1 page Infrared LED Chip GaAlAs/GaAs 1. Material Substrate GaAs (N Type) Epitaxial Layer GaAlAs(P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Parameter Symbol Min Typ Max Unit Condition Characteristics Forward Voltage VF 1.6 1.7 V IF=100mA Reverse Voltage VR 8 V IR=10uA Power PO 23 30 mW IF=100mA λP 940 nm IF=20mA ∆λ 45 nm IF=20mA ※ Note : Power is measured by Sorter E/T system with bare chip. 4. Mechanical Data (a) Emission Area --------------------------- 12.8mil x 12.8mil (b) Bottom Area --------------------------- 13.8mil x 13.8mil (c) Bonding Pad --------------------------- 130um (d) Chip Thickness --------------------------- 11mil (e) Junction Height --------------------------- 6.7mil P Side Electrode N Side Electrode Eoyang factory,513-5 Eoyang-dong, Iksan, 570-210, Korea Tel. +82 63 839 1111 Fax. +82 63 835 8259 www.auk.co.kr OPA9445LSP Wavelength AUK Corp. (c) (a) (b) (e) (d) |
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