STF23NM50N datasheet(5/21 Pages) STMICROELECTRONICS

Part #	STF23NM50N

Description	N-channel 500 V, 0.162 廓, 17 A TO-220, TO-220FP, TO-247, D짼PAK MDmesh??II Power MOSFET

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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STB23NM50N, STF23NM50N, STP23NM50N, STW23NM50N

Electrical characteristics

Doc ID 16913 Rev 4

5/21

Table 7.

Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

td(on)

tr

td(off)

tf

Turn-on delay time

Rise time

Turn-off-delay time

Fall time

VDD = 250 V, ID = 17 A

RG =4.7 Ω VGS = 10 V

(see Figure 17)

-

6.6

19

71

29

-

ns

Table 8.

Source drain diode

Symbol

Parameter

Test conditions

Min

Typ.

Max

Unit

ISD

ISDM

(1)

1.

Pulse width limited by safe operating area

Source-drain current

Source-drain current (pulsed)

-

17

68

A

VSD

(2)

2.

Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Forward on voltage

ISD = 17 A, VGS = 0

-

1.5

V

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 17 A, di/dt = 100 A/µs

VDD = 60 V

(see Figure 22)

-

286

3700

26

ns

nC

A

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 17 A, di/dt = 100 A/µs

VDD = 60 V, Tj = 150 °C

(see Figure 22)

-

350

4800

27

ns

nC

A

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