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STF23NM50N Datasheet(PDF) 5 Page - STMicroelectronics |
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STF23NM50N Datasheet(HTML) 5 Page - STMicroelectronics |
5 / 21 page STB23NM50N, STF23NM50N, STP23NM50N, STW23NM50N Electrical characteristics Doc ID 16913 Rev 4 5/21 Table 7. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) tr td(off) tf Turn-on delay time Rise time Turn-off-delay time Fall time VDD = 250 V, ID = 17 A RG =4.7 Ω VGS = 10 V (see Figure 17) - 6.6 19 71 29 - ns ns ns ns Table 8. Source drain diode Symbol Parameter Test conditions Min Typ. Max Unit ISD ISDM (1) 1. Pulse width limited by safe operating area Source-drain current Source-drain current (pulsed) - 17 68 A A VSD (2) 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Forward on voltage ISD = 17 A, VGS = 0 - 1.5 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 17 A, di/dt = 100 A/µs VDD = 60 V (see Figure 22) - 286 3700 26 ns nC A trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 17 A, di/dt = 100 A/µs VDD = 60 V, Tj = 150 °C (see Figure 22) - 350 4800 27 ns nC A |
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