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OPA8516WDD Datasheet(PDF) 1 Page - KODENSHI_AUK CORP. |
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OPA8516WDD Datasheet(HTML) 1 Page - KODENSHI_AUK CORP. |
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1 / 1 page Infrared LED Chip High Speed GaAlAs/GaAlAs 1. Material Substrate GaAlAs (N Type) Removed Epitaxial Layer GaAlAs (P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Parameter Symbol Min Typ Max Unit Condition Characteristics VF(1) 1.1 V IF=10uA VF(2) 1.58 V IF=50mA Reverse Voltage VR 5 V IR=10uA Power PO 17 20 mW IF=50mA λP 850 nm IF=50mA ∆λ 45 nm IF=50mA Rise Time Tr 22 ns Fall Time Tf 13 ns ※ Note : Power is measured by Sorter E/T system with bare chip. 4. Mechanical Data (a) Emission Area --------------------- 14.7mil x 14.7mil (b) Bottom Area --------------------- 15.7mil x 15.7mil (c) Bonding Pad --------------------- 128um (d) Chip Thickness --------------------- 7mil (e) Junction Height --------------------- 6.5mil P Side Electrode N Side Electrode Eoyang factory,513-5 Eoyang-dong, Iksan, 570-210, Korea Tel. +82 63 839 1111 Fax. +82 63 835 8259 www.auk.co.kr OPA8516WDD Forward Voltage Wavelength AUK Corp. (c) (a) (b) (e) (d) |
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