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BAT46WJ Datasheet(PDF) 7 Page - NXP Semiconductors |
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BAT46WJ Datasheet(HTML) 7 Page - NXP Semiconductors |
7 / 12 page BAT46WJ All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 2 — 8 November 2011 7 of 12 NXP Semiconductors BAT46WJ Single Schottky barrier diode 8. Test information The current ratings for the typical waveforms as shown in Figure 7, 8 and 9 are calculated according to the equations: with IM defined as peak current, at DC, and with IRMS defined as RMS current. 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. (1) IR =1mA Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty cycle =0.05 Oscilloscope: rise time tr =0.35ns Fig 10. Reverse recovery time test circuit and waveforms trr (1) + IF t output signal tr tp t 10 % 90 % VR input signal V = VR + IF × RS RS = 50 Ω IF D.U.T. Ri = 50 Ω SAMPLING OSCILLOSCOPE mga881 Fig 11. Duty cycle definition t1 t2 P t 006aaa812 duty cycle δ = t1 t2 I FAV I M = I RMS I FAV = I RMS I M = |
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