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AP30G120BSW-HF Datasheet(PDF) 1 Page - Advanced Power Electronics Corp. |
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AP30G120BSW-HF Datasheet(HTML) 1 Page - Advanced Power Electronics Corp. |
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1 / 4 page  AP30G120BSW-HF Advanced Power N-CHANNEL INSULATED GATE Electronics Corp. Features ▼ High Speed Switching ▼ Low Saturation Voltage VCE(sat)=2.9V@IC=30A ▼ CO-PAK, IGBT With FRD ▼ RoHS Compliant & Halogen-Free Absolute Maximum Ratings , 1/8" from case for 5 seconds . Notes: 1.Pulse width limited by max . junction temperature . Thermal Data Symbol Rthj-c(IGBT) Rthj-c(Diode) Rthj-a Electrical Characteristics@Tj=25 oC(unless otherwise specified) Symbol Min. Typ. Max. Units IGES -- +500 nA ICES -- 1 mA VCE(sat) - 2.7 3.4 V - 3.7 - V VGE(th) 3- 7 V Qg - 63 100 nC Qge -12 - nC Qgc -32 - nC td(on) -40 - ns tr -45 - ns td(off) - 125 - ns tf - 430 860 ns Eon - 1.3 - mJ Eoff - 3.1 - mJ Cies - 1400 2240 pF Coes - 120 - pF Cres -15 - pF VF - 2.5 3.2 V trr -70 - ns Qrr - 170 - nC Data and specifications subject to change without notice 1 Value ℃ ℃ Units ℃ -55 to 150 -55 to 150 201107251 Halogen-Free Product A 300 ℃ /W ℃ /W Thermal Resistance Junction-Case VGE=15V Collector-Emitter Saturation Voltage Maximum Lead Temp. for Soldering Purposes Thermal Resistance Junction-Ambient Output Capacitance Turn-on Delay Time Gate-Collector Charge Total Gate Charge Parameter VCC=500V BIPOLAR TRANSISTOR WITH FRD. Test Conditions IC=30A Gate-Emitter Charge Gate Threshold Voltage VGE=15V, IC=30A VCE=1200V, VGE=0V Collector-Emitter Leakage Current Parameter Gate-to-Emitter Leakage Current 1200V Rating Collector-Emitter Voltage Units V 1200 V A A A 5 Collector Current Maximum Power Dissipation ℃ /W A 208 8 120 W 30A VCES VCE=VGE, IC=250uA VGE=+30V, VCE=0V 40 Collector Current 40 VGE=15V, IC=60A 0.6 Thermal Resistance Junction-Case PD@TC=25℃ TJ TL Operating Junction Temperature Range TSTG Electrical Characteristics of Diode@Tj=25℃(unless otherwise specified) VCC=600V, Ic=30A, VGE=15V, RG=5Ω, Inductive Load Rise Time Turn-off Delay Time Fall Time f=1.0MHz VGE=0V Reverse Transfer Capacitance Turn-On Switching Loss Turn-Off Switching Loss Reverse Recovery Charge di/dt = 100 A/µs Forward Voltage IF=8A Reverse Recovery Time IF=8A VCE=30V Input Capacitance Storage Temperature Range +30 30 60 IF@TC=25℃ IFM Diode Forward Current Diode Pulse Forward Current IC ICM IC@TC=100℃ Pulsed Collector Current 1 VGE IC@TC=25℃ Parameter Gate-Emitter Voltage Symbol VCES G C E TO-3P G C E |
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