AP28G40GEO datasheet(3/4 Pages) A-POWER

Part #	AP28G40GEO

Description	N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

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Manufacturer	A-POWER [Advanced Power Electronics Corp.]

Direct Link	http://www.a-power.com.tw

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Fig 7. Typical Capacitance Characterisitics

Fig 8. Maximum Pulse Collector Current

Fig 9. Switching Time Test Circuit

Fig 10. Switching Time Waveform

Fig 11. Gate Charge Test Circuit

Fig 12. Gate Charge Waveform

3

AP28G40GEO

td(on) tr

td(off) tf

VCE

VGE

10%

90%

TO THE

OSCILLOSCOPE

-

+

4V

C

G

E

VCE

VGE

RG

RC

VCC=320 V

10

100

1000

10000

1

5

9

1317

212529

3337

V CE , Collector-Emitter Voltage (V))

f=1.0MHz

Cies

Coes

Cres

0

1

2

3

4

5

6

0

20

40

60

80

100

120

Q G , Gate Charge (nC)

I CP =40A

V CE =200V

0

40

80

120

160

02

46

8

V GE , Gate-to-Emitter Voltage (V)

T C =70

o C

VCC=200V

TO THE

OSCILLOSCOPE

-

+

C

G

VCE

VGE

IC

IG

1~3mA

E

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AP28G40GEO Datasheet(PDF) 3 Page - Advanced Power Electronics Corp.

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