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AP9477GM-HF Datasheet(PDF) 3 Page - Advanced Power Electronics Corp.

Part # AP9477GM-HF
Description  N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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Manufacturer  A-POWER [Advanced Power Electronics Corp.]
Direct Link  http://www.a-power.com.tw
Logo A-POWER - Advanced Power Electronics Corp.

AP9477GM-HF Datasheet(HTML) 3 Page - Advanced Power Electronics Corp.

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AP9477GM-HF
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3
0
5
10
15
20
25
024
68
V DS , Drain-to-Source Voltage (V)
T A =25
o C
10V
7.0 V
5.0V
4.5V
V G =3.0V
0
5
10
15
20
25
02468
V DS , Drain-to-Source Voltage (V)
10V
7.0V
5.0V
4.5V
V G =3.0V
T A = 150
o C
70
80
90
100
24
68
10
V GS , Gate-to-Source Voltage (V)
I D =3 A
T A =25 ℃
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
-50
0
50
100
150
T j , Junction Temperature (
o C)
I D =4 A
V G =10V
0.3
0.6
0.9
1.2
1.5
1.8
-50
0
50
100
150
T j , Junction Temperature (
o C)
0
1
2
3
4
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
T j =25
o C
T j =150
o C


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