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AP25N10GP-HF Datasheet(PDF) 3 Page - Advanced Power Electronics Corp.

Part # AP25N10GP-HF
Description  N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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Manufacturer  A-POWER [Advanced Power Electronics Corp.]
Direct Link  http://www.a-power.com.tw
Logo A-POWER - Advanced Power Electronics Corp.

AP25N10GP-HF Datasheet(HTML) 3 Page - Advanced Power Electronics Corp.

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AP25N10GS/P-HF
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3
0
10
20
30
40
50
03
69
12
V DS , Drain-to-Source Voltage (V)
T C =25
o C
V G = 5 .0V
10V
9.0 V
8.0 V
7.0 V
0
10
20
30
40
03
69
12
V DS , Drain-to-Source Voltage (V)
T C = 150
o C
V G = 5 .0V
10V
9.0 V
8 .0V
7.0 V
50
70
90
110
130
2468
10
V GS Gate-to-Source Voltage (V)
I D =12A
T C =25
o C
0.4
0.8
1.2
1.6
2.0
2.4
-50
0
50
100
150
T j , Junction Temperature (
o C)
I D =16A
V G =10V
0
5
10
15
20
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V SD , Source-to-Drain Voltage (V)
T j =25
o C
T j =150
o C
0.4
0.6
0.8
1.0
1.2
1.4
-50
0
50
100
150
T j , Junction Temperature (
o C)


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