LMBT5087LT1G_11 datasheet(1/7 Pages) LRC

Part #	LMBT5087LT1G

Description	Low Noise Transistor PNP Silicon RoHS requirements.

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Manufacturer	LRC [Leshan Radio Company]

Direct Link	http://www.lrc.cn/

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LESHAN RADIO COMPANY, LTD.

1/7

1

3

2

LMBT5087LT1G

SOT– 23 (TO–236AB)

Low Noise Transistor

PNP Silicon

2

EMITTER

3

COLLECTOR

1

BASE

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector–Emitter Voltage

V CEO

– 50

Vdc

Collector–Base Voltage

V CBO

– 50

Vdc

Emitter–Base Voltage

V EBO

– 3.0

Vdc

Collector Current — Continuous

I C

– 50

mAdc

DEVICE MARKING

LMBT5087LT1G =2Q

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation RF-5 Board (1)

P D

225

mW

T A =25 °C

Derate above 25°C

1.8

mW/°C

Thermal Resistance, Junction to Ambient

R θJA

556

°C/W

Total Device Dissipation

P D

300

mW

Alumina Substrate, (2) T A = 25°C

Derate above 25°C

2.4

mW/°C

Thermal Resistance, Junction to Ambient

R θJA

417

°C/W

Junction and Storage Temperature

T J , T stg

–55to+150

°C

ELECTRICAL CHARACTERISTICS (T A = 2

5°C unless otherwise noted)

Characteristic

Symbol

Min

M a x

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

V (BR)CEO

– 50

—

Vdc

(I C = –1.0 mAdc, I B = 0)

Collector–Base Breakdown Voltage

V (BR)CBO

– 50

—

Vdc

(I C = –100

µAdc, I

E = 0)

Collector Cutoff Current

I CBO

n Adc

(V CB = –10 Vdc, I E= 0)

—

–10

(V CB = –35 Vdc, I E= 0)

—

–50

1. FR–5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

ORDERING INFORMATION

•

Device

Marking

Shipping

LMBT5087LT1G

2Q

3000/Tape & Reel

LMBT5087LT3G

10000/Tape & Reel

2Q

compliance with RoHS requirements.

We declare that the material of product

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