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AP9575GM Datasheet(PDF) 1 Page - Advanced Power Electronics Corp.

Part # AP9575GM
Description  Lower Gate Charge, Simple Drive Requirement, Fast Switching Characteristic
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Manufacturer  A-POWER [Advanced Power Electronics Corp.]
Direct Link  http://www.a-power.com.tw
Logo A-POWER - Advanced Power Electronics Corp.

AP9575GM Datasheet(HTML) 1 Page - Advanced Power Electronics Corp.

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Advanced Power
P-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Lower Gate Charge
BVDSS
-60V
▼ Simple Drive Requirement
RDS(ON)
90mΩ
▼ Fast Switching Characteristic
ID
-4A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TA=25℃
A
ID@TA=70℃
A
IDM
A
PD@TA=25℃
W
W/℃
TSTG
℃
TJ
℃
Symbol
Value
Unit
Rthj-a
Maximum Thermal Resistance, Junction-ambient
3
50
℃/W
Data and specifications subject to change without notice
Thermal Data
Parameter
Total Power Dissipation
Operating Junction Temperature Range
-55 to 150
Linear Derating Factor
0.02
Storage Temperature Range
Continuous Drain Current
3
-3.2
Pulsed Drain Current
1
-20
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
AP9575GM
Rating
201204072
RoHS-compliant Product
1
-60
±25
-4.0
2.5
-55 to 150
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
The SO-8 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
S
S
S
G
D
D
D
D
SO-8
G
D
S


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