LBC846BWT1G datasheet(4/9 Pages) LRC

Part #	LBC846BWT1G

Description	General Purpose Transistors NPN Silicon

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Manufacturer	LRC [Leshan Radio Company]

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LESHAN RADIO COMPANY, LTD.

LBC846AWT1G,BWT1G, LBC847AWT1G,BWT1G, CWT1G, LBC848AWT1G,BWT1G,CWT1G

Figure 11. Base Emitter Saturation Voltage vs.

Collector Current

Figure 12. Base Emitter Voltage vs. Collector

Current

IC, COLLECTOR CURRENT (A)

0.1

0.01

0.001

0.0001

0.2

0.3

0.5

0.6

0.7

0.8

1.0

1.1

0.1

0.01

0.001

0.0001

0.2

0.3

0.5

0.6

0.8

0.9

1.0

1.2

0.4

0.9

IC/IB = 20

150°C

−55°C

25°C

0.4

0.7

1.1

VCE = 5 V

150°C

−55°C

25°C

LBC846B

Figure 13. Collector Saturation Region

IB, BASE CURRENT (mA)

Figure 14. Base−Emitter Temperature Coefficient

IC, COLLECTOR CURRENT (mA)

1.0

1.2

1.6

2.0

0.02

1.0

10

0

20

0.1

0.4

0.8

0.2

2.0

10

200

1.0

TA = 25°C

200 mA

50 mA

IC =

10 mA

0.05

0.2

0.5

2.0

5.0

100 mA

20 mA

1.4

1.8

2.2

2.6

3.0

0.5

5.0

20

50

100

-55

°C to 125°C

qVB for VBE

Figure 15. Capacitance

VR, REVERSE VOLTAGE (VOLTS)

40

Figure 16. Current−Gain − Bandwidth Product

IC, COLLECTOR CURRENT (mA)

0.1

0.2

1.0

50

2.0

10

100

200

500

50

20

10

6.0

4.0

1.0

10

50 100

5.0

VCE = 5 V

TA = 25°C

0.5

5.0

20

TA = 25°C

Cob

Cib

Rev.O 4/9

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