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BSS63 Datasheet(PDF) 3 Page - Fairchild Semiconductor |
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BSS63 Datasheet(HTML) 3 Page - Fairchild Semiconductor |
3 / 4 page 3 Typical Characteristics PNP General Purpose Amplifier (continued) Collector-Emitter Breakdown Voltage with Resistance Between Emitter-Base 0.1 1 10 100 1000 170 180 190 200 210 220 RESISTANCE (k ) Ω Input and Output Capacitance vs Reverse Voltage 0.1 1 10 100 0 20 40 60 80 V - REVERSE BIAS VOLTAGE(V) C f = 1.0 MHz R C cb eb Power Dissipation vs Ambient Temperature 0 25 50 75 100 125 150 0 50 100 150 200 250 300 350 TEMPERATURE ( C) o SOT-23 Base-Emitt er ON Voltage vs Collector Current 0.1 1 10 100 0.2 0.4 0.6 0.8 1 I - COLLECTOR CURRENT (mA) 125 °C - 40 °C 25 °C C V = 5V CE Base-Emitter Saturation Voltage vs Collector Current 0.1 1 10 100 0.2 0.4 0.6 0.8 1 I - COLLECTOR CURRENT ( mA) C β = 10 125 °C - 40 °C 25 °C Collector-Cutoff Current vs Ambient Temperature 25 50 75 100 125 150 0.1 1 10 100 T - AM BIENT TE MPE RATURE ( C) A V = 10 0V CB ° |
Similar Part No. - BSS63 |
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Similar Description - BSS63 |
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